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sdwx1f1c C chip on board product data sheet product brief description key applications features and benefits www.seoulsemicon.com 1 rev7.1, nov 10, 2016 enable high flux and cost efficient system sdwx1f1c (sdw01f1c, sdw81f1c, SDW91F1C) z power chip on board C zc series ? size 13.5mm * 13.5mm ? power dissipation 6.3 ~ 18.4w ? wide cct range with cri70~90 ? forward current typ 35.4v ? maximum current 460ma ? macadam 3 - step binning ? uniformed shadow ? excellent thermal management ? rohs compliant table 1. product selection table macadam 3 - step rohs part number cct [k] color min. typ. max. sdw01f1c cool white 4,700 - 6,000 neutral white 3,700 - 4,700 sdw81f1c cool white 4,700 - 6,000 neutral white 3,700 - 4,700 warm white 2,600 - 3,700 SDW91F1C neutral white 3,700 - 4,200 warm white 2,600 - 3,700 ? the zc series are led arrays which provide high flux and high efficacy. ? it is especially designed for easy assembly of lighting fixtures by eliminating reflow soldering process. ? its thermal management is better than other power led solutions with wide metal area. ? zc series are ideal light sources for general lighting applications including replacement lamps, industrial & commercial lightings and other high lumen required applications. ? commercial C downlight ? replacement lamps C bulb, par, mr16 ? industrial ? residential lm - 80
2 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board table of contents index ? product brief 1 ? table of contents 2 ? performance characteristics 3 ? characteristics graph 6 ? color bin structure 14 ? mechanical dimensions 19 ? emitter tape & reel packaging 20 ? product nomenclature 22 ? handling of silicone resin for leds 23 ? precaution for use 24 ? company information 27
3 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board performance characteristics notes : part number cct (k) [1] typical luminous flux [2 ] , v [3] (lm) typical forward voltage, v f [4] (v) cri [ 5] , r a viewing angle (degrees) 2 ? typ. 180ma 460ma * 180ma 460ma * min. typ. sdw01f1c 5600 997 2,213 35.4 38.7 70 120 5000 1026 2,273 35.4 38.7 70 120 4500 989 2,175 35.4 38.7 70 120 4000 970 2,134 35.4 38.7 70 120 sdw81f1c 5600 930 2,065 35.4 38.7 80 120 5000 942 2,090 35.4 38.7 80 120 4500 907 2,020 35.4 38.7 80 120 4000 890 1,907 35.4 38.7 80 120 3500 875 1,875 35.4 38.7 80 120 3000 870 1,865 35.4 38.7 80 120 2700 835 1,788 35.4 38.7 80 120 SDW91F1C 4000 739 1,598 35.4 38.7 90 120 3500 701 1,514 35.4 38.7 90 120 3000 690 1,490 35.4 38.7 90 120 2700 652 1,406 35.4 38.7 90 120 (1) correlated color temperature is derived from the cie 1931 chromaticity diagram. color coordinate : ? 0.005, cct ? 5% tolerance. (2) seoul semiconductor maintains a tolerance of 7% on flux and power measurements. (3) v is the total luminous flux output as measured with an integrating sphere. (4) tolerance is 3% on forward voltage measurements. (5) tolerance is 2 on cri measurements. * no values are provided by real measurement. only for reference purpose. table 2. electro optical characteristics, t j =25oc
4 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board performance characteristics notes : part number cct (k) [1] typical luminous flux [2 ] , v [3] (lm) typical forward voltage, v f [4] (v) typ. 180ma * 180ma * sdw01f1c 5600 902 33.8 5000 929 33.8 4500 895 33.8 4000 878 33.8 sdw81f1c 5600 837 33.8 5000 847 33.8 4500 816 33.8 4000 801 33.8 3500 788 33.8 3000 783 33.8 2700 752 33.8 SDW91F1C 4000 647 33.8 3500 613 33.8 3000 604 33.8 2700 571 33.8 (1) correlated color temperature is derived from the cie 1931 chromaticity diagram. color coordinate : ? 0.005, cct ? 5% tolerance. (2) seoul semiconductor maintains a tolerance of 7% on flux and power measurements. (3) v is the total luminous flux output as measured with an integrating sphere. (4) tolerance is 3% on forward voltage measurements. (5) tolerance is 2 on cri measurements. * no values are provided by real measurement. only for reference purpose. table 3. electro optical characteristics, t j =85oc
5 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board performance characteristics parameter symbol value unit min. typ. max. forward current i f - 180 460 ma power dissipation p d - 6.3 18.4 w junction temperature t j - - 140 oc operating temperature t opr - 40 - 85 oc surface temperature t s - - 100 oc storage temperature t stg - 40 - 100 oc thermal resistance (j to s ) [1] rth js - 1.68 - k/w esd sensitivity(hbm) - class 3a jesd22 - a114 - e table 4. absolute maximum characteristics, t j =25oc notes : (1) thermal resistance : rth js (junction / solder ) ? leds properties might be different from suggested values like above and below tables if operation condition will be exceeded our parameter range. care is to be taken that power dissipation does not exceed the absolute maximum rating of the product. ? thermal resistance can be increased substantially depending on the heat sink design/operating condition, and the maximum possible driving current will decrease accordingly. ? all measurements were made under the standardized environment of seoul semiconductor.
6 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board characteristics graph fig 1. color spectrum, t j =25 , i f =180ma (cri70) fig 2. color spectrum, t j =25 , i f =180ma (cri80) 400 450 500 550 600 650 700 750 800 0 20 40 60 80 100 120 relative intensity(%) wavelength (nm) cri70(5000k) cri70(4000k) 400 450 500 550 600 650 700 750 800 0 20 40 60 80 100 120 relative intensity(%) wavelength (nm) cri80(5000k) cri80(4000k) cri80(3000k)
7 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board characteristics graph fig 3. color spectrum, t j =25 , i f =180ma (cri90) 400 450 500 550 600 650 700 750 800 0 20 40 60 80 100 120 relative intensity(%) wavelength (nm) cri90(4000k) cri90(2700k)
8 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board characteristics graph fig 4 . radiant pattern , t j =25 , i f =180ma -100 -75 -50 -25 0 25 50 75 100 0 25 50 75 100 relative intensity (%) angle (degrees)
9 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board characteristics graph fig 5. forward voltage vs. forward current, t j =25 fig 6. forward current vs. relative luminous flux, t j =25 25 30 35 40 0.0 0.1 0.2 0.3 0.4 0.5 foward current (a) foward voltage (v) 0.0 0.1 0.2 0.3 0.4 0.5 0 50 100 150 200 250 relative luminous flux (%) foward current (a)
10 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board characteristics graph fig 7. junction temperature vs. relative light output, i f =180ma fig 8 . junction temperature vs . forward voltage, i f =180ma 25 50 75 100 125 150 0 20 40 60 80 100 120 relative luminous flux (%) junction temperature ( o c ) 25 50 75 100 125 150 26 28 30 32 34 36 foward voltage (v) junction temperature( o c)
11 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board characteristics graph fig 10 . junction temperature vs. cie x, y shift, i f =180ma ( cri90 ) fig 9. junction temperature vs. cie x, y shift, i f =180ma (cri70) 20 40 60 80 100 120 140 -0.03 -0.02 -0.01 0.00 0.01 0.02 0.03 relative variation jinction temperature( o c) cie x(5000k) cie y(5000k) 20 40 60 80 100 120 140 -0.03 -0.02 -0.01 0.00 0.01 0.02 0.03 cie x(3000k) cie y(3000k) relative variation junction temperature( o c)
12 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board characteristics graph fig 11. junction temperature vs. cie x, y shift, i f =180ma (cri80) 20 40 60 80 100 120 140 -0.03 -0.02 -0.01 0.00 0.01 0.02 0.03 cie x(5000k) cie y(5000k) relative variation junction temperature ( o c) 20 40 60 80 100 120 140 -0.03 -0.02 -0.01 0.00 0.01 0.02 0.03 cie x(3000k) cie y(3000k) relative variation junction temperature ( o c)
13 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board characteristics graph fig 12. surface temperature vs. maximum forward current, t j (max.)=140 20 40 60 80 100 120 0.0 0.2 0.4 0.6 maximum current (a) surface temperature ( o c)
14 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board color bin structure table 5. bin code description table 6 . intensity rank distribution available ranks part number cct cie lf rank vf rank sdw01f1c 5300~6000k b d e f e f 4700~5300k c d e f e f 4200~4700k d d e f e f 3700~4200k e d e f e f sdw81f1c 5300~6000k b c0 c1 d e0 e f 4700~5300k c c0 c1 d e0 e f 4200~4700k d c0 c1 d e0 e f 3700~4200k e c0 c1 d e0 e f 3200~3700k f c0 c1 d e0 e f 2900~3700k g c0 c1 d e0 e f 2600~2900k h c0 c1 d e0 e f SDW91F1C 3700~4200k e b1 b2 c e f 3200~3700k f b1 b2 c e f 2900~3200k g b1 b2 c e f 2600~2900k h b1 b2 c e f part number luminous flux (lm) @ i f = 180ma color chromaticity coordinate @ i f = 180ma typical forward voltage ( v f ) @ i f = 180ma bin code min. max. bin code min. max. sdw01f1c d 700 900 refer to page.15~18 e 34.0 38.0 e 900 1100 f 38.0 40.0 f 1100 1300 sdw81f1c c0 700 750 refer to page.15~18 e 34.0 38.0 c1 750 800 d 800 900 f 38.0 40.0 e0 900 1000 SDW91F1C b1 570 635 refer to page.15~18 e 34.0 38.0 b2 635 700 f 38.0 40.0 c 700 800
15 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board color bin structure cie chromaticity diagram 0.33 0.36 0.39 0.42 0.45 0.48 0.33 0.36 0.39 0.42 y x
16 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board color bin structure cie chromaticity diagram, t j =25 , i f =180ma b0 b1 b2 cie x cie y cie x cie y cie x cie y 0.3207 0.3462 0.3292 0.3539 0.3212 0.3389 0.3212 0.3389 0.3293 0.3461 0.3217 0.3316 0.3293 0.3461 0.3373 0.3534 0.3293 0.3384 0.3292 0.3539 0.3376 0.3616 0.3293 0.3461 b3 b4 b5 cie x cie y cie x cie y cie x cie y 0.3293 0.3461 0.3217 0.3316 0.3293 0.3384 0.3293 0.3384 0.3222 0.3243 0.3294 0.3306 0.3369 0.3451 0.3294 0.3306 0.3366 0.3369 0.3373 0.3534 0.3293 0.3384 0.3369 0.3451 c0 c1 c2 cie x cie y cie x cie y cie x cie y 0.3376 0.3616 0.3463 0.3687 0.3373 0.3534 0.3373 0.3534 0.3456 0.3601 0.3369 0.3451 0.3456 0.3601 0.3539 0.3669 0.3448 0.3514 0.3463 0.3687 0.3552 0.3760 0.3456 0.3601 c3 c4 c5 cie x cie y cie x cie y cie x cie y 0.3456 0.3601 0.3369 0.3451 0.3448 0.3514 0.3448 0.3514 0.3366 0.3369 0.3440 0.3428 0.3526 0.3578 0.3440 0.3428 0.3514 0.3487 0.3539 0.3669 0.3448 0.3514 0.3526 0.3578 0.32 0.34 0.36 0.32 0.34 0.36 0.38 4700k 5000k 5300k 5600k b4 b0 y x b2 b5 b1 b3 c4 c0 c2 c5 c1 c3 6000k
17 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board color bin structure cie chromaticity diagram, t j =25 , i f =180ma ansi d21 d22 d23 d24 cie x cie y cie x cie y cie x cie y cie x cie y 0.3528 0.3599 0.3628 0.3732 0.3601 0.3587 0.3511 0.3466 0.3548 0.3736 0.3641 0.3805 0.3645 0.3618 0.3528 0.3599 0.3641 0.3805 0.3736 0.3874 0.3663 0.3699 0.3570 0.3631 0.3628 0.3732 0.3703 0.3728 0.3703 0.3728 0.3560 0.3558 0.3580 0.3697 0.3663 0.3699 0.3670 0.3578 0.3601 0.3587 0.3570 0.3631 0.3681 0.3771 0.3590 0.3521 0.3590 0.3521 e21 e22 e23 e24 cie x cie y cie x cie y cie x cie y cie x cie y 0.3703 0.3726 0.3890 0.3842 0.3670 0.3578 0.3784 0.3647 0.3736 0.3874 0.3914 0.3922 0.3703 0.3726 0.3806 0.3725 0.3871 0.3959 0.3849 0.3881 0.3765 0.3765 0.3865 0.3762 0.3849 0.3881 0.3871 0.3959 0.3746 0.3689 0.3890 0.3842 0.3784 0.3841 0.4006 0.4044 0.3806 0.3725 0.3952 0.3880 0.3765 0.3765 0.3952 0.3880 0.3784 0.3647 0.3898 0.3716 3 - step 4 - step d10 e10 d11 e11 cie x cie y cie x cie y cie x cie y cie x cie y 0.3589 0.3685 0.3764 0.3713 0.3560 0.3557 0.3746 0.3689 0.3665 0.3742 0.3793 0.3828 0.3580 0.3697 0.3784 0.3841 0.3637 0.3622 0.3890 0.3887 0.3681 0.3771 0.3914 0.3922 0.3573 0.3579 0.3854 0.3768 0.3645 0.3618 0.3865 0.3762 0.34 0.36 0.38 0.40 0.34 0.36 0.38 0.40 ansi macadam 3-step macadam 4-step 3700k 4000k 4200k 4500k d11 d10 d23 d24 d22 y x d21 e11 e10 e23 e24 e22 e21 4700k
18 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board color bin structure cie chromaticity diagram, t j =25 , i f =180ma ansi f21 f22 f23 f24 cie x cie y cie x cie y cie x cie y cie x cie y 0.4148 0.4090 0.4013 0.3887 0.4223 0.3990 0.4299 0.4165 0.3996 0.4015 0.3943 0.3853 0.4153 0.3955 0.4148 0.4090 0.3943 0.3853 0.3889 0.3690 0.4116 0.3865 0.4113 0.4002 0.4013 0.3887 0.4018 0.3752 0.4049 0.3833 0.4186 0.4037 0.4040 0.3966 0.4049 0.3833 0.4018 0.3752 0.4153 0.3955 0.4113 0.4002 0.3981 0.3800 0.4147 0.3814 0.4223 0.3990 g21 g22 g23 g24 cie x cie y cie x cie y cie x cie y cie x cie y 0.4223 0.3990 0.4406 0.4055 0.4147 0.3814 0.4259 0.3853 0.4299 0.4165 0.4451 0.4145 0.4223 0.3990 0.4302 0.3943 0.4430 0.4212 0.4387 0.4122 0.4284 0.4011 0.4361 0.3964 0.4387 0.4122 0.4430 0.4212 0.4243 0.3922 0.4406 0.4055 0.4324 0.4100 0.4562 0.4260 0.4302 0.3943 0.4468 0.4077 0.4284 0.4011 0.4468 0.4077 0.4259 0.3853 0.4373 0.3893 h21 h22 h23 h24 cie x cie y cie x cie y cie x cie y cie x cie y 0.4468 0.4077 0.4644 0.4118 0.4373 0.3893 0.4483 0.3919 0.4562 0.4260 0.4697 0.4211 0.4468 0.4077 0.4534 0.4012 0.4687 0.4289 0.4636 0.4197 0.4526 0.4090 0.4591 0.4025 0.4636 0.4197 0.4687 0.4289 0.4477 0.3998 0.4644 0.4118 0.4575 0.4182 0.4810 0.4319 0.4534 0.4012 0.4703 0.4132 0.4526 0.4090 0.4703 0.4132 0.4483 0.3919 0.4593 0.3944 3 - step 4 - step f10 g10 h10 f11 g11 h11 cie x cie y cie x cie y cie x cie y cie x cie y cie x cie y cie x cie y 0.4006 0.3829 0.4267 0.3946 0.4502 0.4020 0.3981 0.3800 0.4243 0.3922 0.4477 0.3998 0.4051 0.3954 0.4328 0.4079 0.4576 0.4158 0.4040 0.3966 0.4324 0.4100 0.4575 0.4182 0.4159 0.4007 0.4422 0.4113 0.4667 0.4180 0.4186 0.4037 0.4451 0.4145 0.4697 0.4211 0.4108 0.3878 0.4355 0.3977 0.4588 0.4041 0.4116 0.3865 0.4361 0.3964 0.4591 0.4025 0.38 0.40 0.42 0.44 0.46 0.48 0.36 0.38 0.40 0.42 0.44 f11 g11 h11 h21 h22 h23 h24 g24 g23 g22 g21 f22 f21 f24 f10 2600k 2700k 2900k 3000k 2100k 3500k 3700k h10 g10 ansi macadam 3-step macadam 4-step y x f23
19 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board mechanical dimensions notes : (1) all dimensions are in millimeters. (2) scale : none (3) undefined tolerance is 0.2mm x 12 x 12 cathode anode circuit
20 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board emitter tape & reel packaging notes : (1) quantity : 30pcs/tray (2) all dimensions are in millimeters (tolerance : 0.3) (3) scale none
21 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board emitter tape & reel packaging notes : (1) heat sealed after packing (use zipper bag) (2) quantity : 3tray(90pcs) /bag aluminum bag outer box
22 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board product nomenclature lot number code description y 1 y 2 y 3 y 4 y 5 date of box packing y 6 y 7 y 8 y 9 y 10 date of label order y 11 y 12 y 13 y 14 y 15 y 16 y 17 item code table 7. part numbering system : x 1 x 2 x 3 x 4 x 5 x 6 x 7 x 8 table 8. lot numbering system : y 1 y 2 y 3 y 4 y 5 y 6 y 7 y 8 y 9 y 10 C y 11 y 12 y 13 y 14 y 15 y 16 y 17 part number code description part number value x 1 company s x 2 package series d x 3 x 4 color specification w0 cri 70 w8 cri 80 w9 cri 90 x 5 series number 1 x 6 lens type f flat x 7 pcb type 1 pcb x 8 revision number c new cob type
23 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board handling of silicone resin for leds (1) during processing, mechanical stress on the surface should be minimized as much as possible. sharp objects of all types should not be used to pierce the sealing compound. (3) silicone differs from materials conventionally used for the manufacturing of leds. these conditions must be considered during the handling of such devices. compared to standard encapsulants , silicone is generally softer, and the surface is more likely to attract dust. as mentioned previously , the increased sensitivity to dust requires special care during processing. in cases where a minimal level of dirt and dust particles cannot be guaranteed, a suitable cleaning solution must be applied to the surface after the soldering of wire. (4) seoul semiconductor suggests using isopropyl alcohol for cleaning. in case other solvents are used, it must be assured that these solvents do not dissolve the package or resin. ultrasonic cleaning is not recommended. ultrasonic cleaning may cause damage to the led. (5) please do not mold this product into another resin (epoxy, urethane, etc) and do not handle this product with acid or sulfur material in sealed space. (6) avoid leaving fingerprints on silicone resin parts. (2) in general, leds should only be handled from the side. by the way, this also applies to leds without a silicone sealant, since the surface can also become scratched.
24 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board precaution for use (1) storage to avoid the moisture penetration, we recommend storing power leds in a dry box with a desiccant. (2) for manual soldering seoul semiconductor recommends the soldering condition (zc series product is not adaptable to reflow process) a. use lead - free soldering b. soldering should be implemented using a soldering equipment at temperature lower than 350 c. c. before proceeding the next step, product temperature must be stabilized at room temperature. (3) components should not be mounted on warped (non coplanar) portion of pcb. (4) radioactive exposure is not considered for the products listed here in. (5) it is dangerous to drink the liquid or inhale the gas generated by such products when chemically disposed of. (6) this device should not be used in any type of fluid such as water, oil, organic solvent and etc. when washing is required, ipa (isopropyl alcohol) should be used. (7) when the leds are in operation the maximum current should be decided after measuring the package temperature. (8) the appearance and specifications of the product may be modified for improvement without notice. (9) long time exposure of sun light or occasional uv exposure will cause silicone discoloration. ( 10) attaching leds, do not use adhesive that outgas organic vapor. ( 11) the driving circuit must be designed to allow forward voltage only when it is on or off. if the reverse voltage is applied to led, migration can be generated resulting in led damage. ( 12) please do not touch any of the circuit board, components or terminals with bare hands or metal while circuit is electrically active .
25 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board precaution for use (13) vocs (volatile organic compounds) emitted from materials used in the construction of fixtures can penetrate silicone encapsulants of leds and discolor when exposed to heat and photonic energy. the result can be a significant loss of light output from the fixture. knowledge of the properties of the materials selected to be used in the construction of fixtures can help prevent these issues. (14) leds are sensitive to electro - static discharge (esd) and electrical over stress (eos). below is a list of suggestions that seoul semiconductor purposes to minimize these effects . . esd (electro static discharge) electrostatic discharge (esd) is the defined as the release of static electricity when two objects come into contact. while most esd events are considered harmless, it can be an expensive problem in many industrial environments during production and storage. the damage from esd to an leds may cause the product to demonstrate unusual characteristics such as : - increase in reverse leakage current lowered turn - on voltage - abnormal emissions from the led at low current the following recommendations are suggested to help minimize the potential for an esd event. one or more recommended work area suggestions : - ionizing fan setup - esd table/shelf mat made of conductive materials - esd safe storage containers one or more personnel suggestion options : - antistatic wrist - strap - antistatic material shoes - antistatic clothes environmental controls: - humidity control (esd gets worse in a dry environment)
26 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board precaution for use . eos (electrical over stress) electrical over - stress (eos) is defined as damage that may occur when an electronic device is subjected to a current or voltage that is beyond the maximum specification limits of the device. the effects from an eos event can be noticed through product performance like: - changes to the performance of the led package (if the damage is around the bond pad area and since the package is completely encapsulated the package may turn on but flicker show severe performance degradation.) - changes to the light output of the luminaire from component failure - components on the board not operating at determined drive power failure of performance from entire fixture due to changes in circuit voltage and current across total circuit causing trickle down failures. it is impossible to predict the failure mode of every led exposed to electrical overstress as the failure modes have been investigated to vary, but there are some common signs that will indicate an eos event has occurred: - damaged may be noticed to the bond wires (appearing similar to a blown fuse) - damage to the bond pads located on the emission surface of the led package (shadowing can be noticed around the bond pads while viewing through a microscope) - anomalies noticed in the encapsulation and phosphor around the bond wires. - this damage usually appears due to the thermal stress produced during the eos event. . to help minimize the damage from an eos event seoul semiconductor recommends utilizing: - a surge protection circuit - an appropriately rated over voltage protection device - a current limiting device
27 rev7.1, nov 10, 2016 www.seoulsemicon.com product data sheet sdwx1f1c C chip on board company information published by seoul semiconductor ? 2013 all rights reserved. company information seoul semiconductor (www.seoulsemicon.com) manufacturers and packages a wide selection of light emitting diodes (leds) for the automotive, general illumination/lighting, home appliance, signage and back lighting markets. the company is the worlds fifth largest led supplier, holding more than 10,000 patents globally, while offering a wide range of led technology and production capacity in areas such as npola , "acrich", the worlds first commercially produced ac led, and "acrich mjt - multi - junction technology" a proprietary family of high - voltage leds. the companys broad product portfolio includes a wide array of package and device choices such as acrich and acirch2, high - brightness leds, mid - power leds, side - view leds, and through - hole type leds as well as custom modules, displays, and sensors. legal disclaimer information in this document is provided in connection with seoul semiconductor products. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, seoul semiconductor hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non - infringement of intellectual property rights of any third party. the appearance and specifications of the product can be changed to improve the quality and/or performance without notice.

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